The Sirion high resolution SEM equipped with a schottky field emission source with high
voltage variable between 200 V and 300 Kv.Detectors include Everhat-Thorley and solid state back scatted detectors and an in-lens detector for high resolution imaging

Key Features:

•Energy Dispersive X-ray analysis with an ultra thin window detector (EDAX).

•Equipped with Electron Back Scattering Diffraction (EBSD,TSL) detector used to examine the crystallographic orientation of many materials, which can be used to elucidate texture or preferred orientation of any crystalline or polycrystalline material.

•In-situ straining stage (Gatan).

•Ultra high resolution with in-lens SE detector.

Essential Specifications:

  • Resolution:  1.5 nm at > 10kV, 2.5 nm at 1 kV, 3.5 nm at 500V
  • Emitter: field emission source
  • Accelerating Voltage: 0.2 – 30 kV
  • Detectors: Everhart Thornley Detector (ETD), Solid State Backscattered Electron Detector SSD-
  • BSD, in-lens detector, EDS Detector EDAX Genesis
  • Image Processing: Resolution: Up to 3800 x 2800 pixels ,  Dwell: 100 ns – 1 ms per pixel