Focused Ion Beam System (Strata FIB 201Xp)

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The Focused Ion Beam System is a multipurpose device, wherein a focused ion beam is rastered across a Specimen to carry out micromachining, imaging or film deposition at length scales extending down to a few tens of nanometers. Accurate milling and fine polishing can be achieved by selecting different beam currents. Some of the common uses of this technique include insitu cross sectioning, failure analysis, micro machining, depositing interconnect lines for microelectronics and preparation of site specific thin lamellas for TEM.

This system is equipped with two GIS (Gas Injection System) / beam gas chemistries with Iodine and Platinum. Iodine permits more rapid etching of metals, such as aluminium, while platinum precursors
allow the deposition of conducting layers.


Key Features:

Single Ga Ion Beam System.
Detectors for imaging – CDME
Accelerating Energy Range: 1 – 30 keV.
Beam current range: 1 pA – 11.5nA.
Lessthan 50 nm minimum resolution in milling and patterning.
Two complimentary gas injection systems (GIS) for Pt deposition and Iodine enhanced etch.